Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al 2O 3 matrix

Abstract

We present the synthesis and electrical characterization of amorphous nanocomposite layers made of metallic nanoclusters embedded in an alumina matrix (nc-Co:Al 2O 3). The nanostructured materials were fabricated using a pulsed laser deposition (PLD)-derived method based on a nano-cluster generator coupled with a conventional PLD system for host medium co-deposition. The films were subjected to a detailed structural study carried out using high-resolution transmission electron microscopy and atomic force microscopy. The clusters inserted in the alumina matrix are metallic, well crystallized and possess an fcc structure with an average diameter centered at ∼ 2 nm. Dielectric constant and electrical conduction mechanisms of nc-Co:Al 2O 3 layers integrated in metal–insulator–metal capacitive structures were studied for different doping levels and for a broad temperature range (303–473 K). It was concluded that the dielectric constant in the films depends on the doping levels while the major electrical conduction mechanisms are best described by the space charge limited currents formalism, in which the current density J on an applied voltage V follow a power-law dependence ( J ∼ V n ) at applied voltages higher than ∼ 2 V. Such composite may find immediate applications as dielectric layers with controlled discharging conduction paths in Radio Frequency-Micro-Electro-Mechanical Systems capacitive structures.