Abstract
This study presents the electrical charge transport properties of caesium tin chloride (CsSnCl3) perovskite microrods. The as-synthesized microstructure rods were characterized using XRD, FESEM, EDS, and elemental mapping. The current–voltage (I-V) characteristics of microstructures were recorded. The I-V analysis demonstrates that as the side length of a microrod varies from 356 µm to 136 µm, the conductivity, barrier height, and ideality factor changes from 3.08 × 10−4 to 1.32 × 10−4 S/m, 0.84 eV to 0.78 eV, and 2.09 to 2.86, respectively. The charge transport investigation revealed that the sample exhibited ohmic conduction at a lower voltage and trap charge-limited conduction (TCL) after a transition voltage. The discrete trap charge concentration was found to be in the order of 1014 /m3 in the TCL region. The excellent conductivity of microstructure rods and the low trap charge concentration suggest that microrods have the potential for use in optoelectronic device applications.
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