Abstract
Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ({V}_{{rm{Si}}}) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from {V}_{{rm{Si}}} defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost 50 % via application of external bias. Furthermore, we identify charge state transitions of {V}_{{rm{Si}}} by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of {V}_{{rm{Si}}} at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, {V}_{{rm{Si}}} defect ensembles in 4H-SiC highly suitable for quantum applications.
Highlights
Solid-state single-photon emitters (SPEs) and optically addressable spin centers are an emerging technology ideally suited for quantum computing, sensing, and information processing applications.[1,2] Efficient room-temperature single-photon sources naturally fulfill key requirements for enabling secure communication via quantum key distribution,[3,4] and offer a platform for optical quantum computing[5] and communication.[6]
The V1 and V2 emission lines were attributed to the inequivalent hexagonal (h) and pseudo-cubic (k) defect previously configurations, suggested.[32] respectively,[20,33] in contrast to what was Figure 1b illustrates the ground state atedrnmeadfniesscsVittioiÀScoin(onk,n)),fifargroneumsdrpaettoiwcontoniev, epfeolayxr.rctIiiVntaeÀSlidca(hhd)sadtr(iagtttiheoeend,aeVcnV1csÀSeiitasymnsiadbanlnedVif1sef′postirtnsraVssntÀSinasioefno-(ptsrhh)V.eoÀSTti o(Vhhn2e) presence of V1′, a ZPL closely related to V1, but assigned to a esenceorgnyd,19,e21x,2c4it,3e3dmasrtkastetheoVf 1/VVÀS1i′
By correlating the PL and deep level transient spectroscopy (DLTS) responses of VSi and identifying the DLTS S-center, we identify thermodynamic transition levels of a solid-state qubit candidate, and provide an additional means of detecting and controlling the VSi in 4H-SiC
Summary
Solid-state single-photon emitters (SPEs) and optically addressable spin centers are an emerging technology ideally suited for quantum computing, sensing, and information processing applications.[1,2] Efficient room-temperature single-photon sources naturally fulfill key requirements for enabling secure communication via quantum key distribution,[3,4] and offer a platform for optical quantum computing[5] and communication.[6]. The nitrogen-vacancy center in diamond[1] has become a benchmark for implementing semiconductor point defects in quantum technologies, but is suffering from the immaturity of the material and device fabrication. Point defects in silicon carbide (4H-SiC) have gained attention as a more devicefriendly alternative, offering a platform to merge existing semiconductor processing capabilities with the quantum technology of the future.[9,10] Recent testaments to the viability of 4H-SiC as a quantum host include single-photon emission from, and coherent control of, the silicon vacancy (VSi),[11,12,13] carbon antisitevacancy pair (CSiVC),[14] transition metal[15] and silicon-carbon divacancy (VSiVC)[16] spins at room temperature, as well as observations of millisecond spin coherence times for VSi17 and VSiVC18 at cryogenic temperatures
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