Electrical characterizations of preamorphized junctions under LF magnetic field

Abstract

The increased requirements for reduction of electronic system dimensions, essentially in embedded equipment such as automotive and avionics, lead to juxtapose high power modules and low level modules on the same printed circuit. This juxtaposition induces electromagnetic perturbations that can disturb or damage the operation of the system. In order to study thoroughly these phenomena, a low frequency (LF) magnetic field was applied to shallow P +N junctions obtained by the preamorphization technique, at two temperatures: ambient and nitrogen temperature. Electrical characterizations were performed on the different samples. The results show that the impact of the LF magnetic field is essentially observed in the generation-recombination region of the junction. Moreover, it appears that crystalline sample presents a good immunity to the LF magnetic field perturbation at high temperature. On the other hand, the preamorphization temperature influences the response of the sample. So, a good control of the technological parameters will permit to reduce or cancel the effect of the magnetic perturbations on the electronic components since conception.