Abstract
In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
