Abstract
In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.
Highlights
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photoconductive semiconductor switch (PCSS) is is shown in Figure was triggered atest laser pulse generated byshown an Nd:YAG
PCSS is in Figure was triggered laser pulse generated by an was triggered by a nm laser pulse generated by an
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. High-power nanosecond ultrafast switching devices have been widely used in highpower microwave systems, mostly as trigger generators in the Z-pinch pulsed-power systems. They have been used in the biomedical industry [1–10]. A photoconductive semiconductor switch (PCSS) can operate at high voltage, has a low inductance, and can provide a high-speed response to laser pulses. These properties make the PCSS a suitable solution for both ultra-high-speed electronic applications and high-power pulse generation [11–16]
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