Abstract
ABSTRACT ZrO2 films were prepared on 150 mm (100) silicon substrates using liquid delivery MOCVD and Zirconium-tert-butoxide as precursor. The substrate temperature and the total process pressure were varied from 400°C to 500°C and from 1.5 mbar to 7.5 mbar, respectively. The surface roughness of the ZrO2 films was measured by atomic force microscopy (AFM). X-ray diffraction measurements (XRD) indicated the coexistence of monoclinic and cubic/tetragonal phases, whose ratio depended on the deposition temperature. The relative dielectric constant was calculated from the capacitance at strong accumulation. The values of the as grown layers were ranging from 14 for the thinnest layer up to 30 for the thickest layer. The density of interface states was determined from quasi-static CV-curves and admittance spectroscopy. Annealing decreased the interface trap density and the leakage current density but the measured dielectric constant was also lowered. After a temperature treatment at 800°C the best electrical properties were observed.
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