Abstract
In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV.
Highlights
II–VI compounds are of potential interest for photovoltaic and optoelectronic device application in UV to IR region owing to their direct band gap, which span over the entire visible region of the spectrum and high absorption coefficient (Fahrenbruch 1977; Chu and Chu 1995; Lour and Chang 1996; Neumark 1997; Le Meur et al 1998; Chang and Lii 1998)
In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique
II–VI compounds are of potential interest for photovoltaic and optoelectronic device application in UV to IR region owing to their direct band gap, which span over the entire visible region of the spectrum and high absorption coefficient (Fahrenbruch 1977; Chu and Chu 1995; Lour and Chang 1996; Neumark 1997; Le Meur et al 1998; Chang and Lii 1998)
Summary
II–VI compounds are of potential interest for photovoltaic and optoelectronic device application in UV to IR region owing to their direct band gap, which span over the entire visible region of the spectrum and high absorption coefficient (Fahrenbruch 1977; Chu and Chu 1995; Lour and Chang 1996; Neumark 1997; Le Meur et al 1998; Chang and Lii 1998). The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. We report electrical properties of p-CdTe/ n-ZnSe prepared by thermal evaporation.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
