Abstract
We have developed a technique for the fabrication of shallow, silicided junctions with good electrical characteristics. By the implantation of suitable impurity ions into titanium silicide layers on Si formed by ion-beam mixing and low-temperature annealing, and the subsequent diffusion of the implanted ions at high temperature into the Si substrate, shallow p+/n, n+/p, and double-diffused n+-n−/p junctions with silicide ohmic contacts have been obtained. Results of contact resistance, contact morphology, junction integrity, and carrier concentration profile are reported. The effects of implantation energy, implant dose, and annealing parameters are discussed. This technique can be easily applied to the fabrication of metal-oxide-semiconductor field-effect transistors in a self-aligned fashion.
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