Abstract
In this study, we fabricated two thermoelectric (TE) generation (TEG) devices based on p-Bi0.4Sb1.6Se2.4Te0.6 and n-Bi2Se0.6Te2.4 bulk TE materials. The overall dimensions of these devices, which comprise 9 (D1)-and 18(D2)-couples of legs connected and attached to alumina substrates by Ag paste–Cu plate–Ag paste electrodes, are 50mm ×25mm and 50mm ×50mm, respectively. The open-circuit voltage (Voc) and the maximum output power (Pmax) were estimated in terms of the temperature difference (ΔT) between hot (TH) and cold (TC) junctions as well as the number of p–n couples of the TEG devices. The significance of the resistances, including the internal resistance (Rin) and contact resistance (Rc) between legs and electrodes, are discussed. Pmax obtained with the D2 device was 273mW under thermal conditions of TH=523K and ΔT=184K.
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