Abstract
A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The circular resistor structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects. An application to the TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces is presented. Good agreement is found with standard models for contact resistivity extraction that rely on cross Kelvin resistor test structures. >
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