Abstract
SrTiO3(100) films homoepitaxially grown on Nb-doped SrTiO3(100) substrates with various Nb concentrations and SrTiO3(111) films epitaxialy grown on the [111]-oriented Pt thin-film electrode formed on SiO2/Si substrates with Ta buffer layers were prepared by the helicon sputtering method. After the top Pt electrode formation, the obtained Pt/SrTiO3/SrTiO3:Nb metal-insulator-semiconductor (MIS) capacitors and Pt/SrTiO3/Pt/Ta/SiO2/Si metal-insulator-metal (MIM) capacitors were electrically evaluated by current versus bias voltage characteristic (I–V) and capacitance versus bias voltage characteristic (C–V) measurements to clarify the specific features of the SrTiO3/SrTiO3:Nb interface compared with the SrTiO3/Pt interface. The existence of a space charge layer at the SrTiO3/SrTiO3:Nb interface was clearly characterized.
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