Abstract
In this paper a statistically significant study of 1096 individual GaN nanowire (NW)devices is presented. We have correlated the effects of changing growth parametersfor hot-wall chemically-vapour-deposited (HW-CVD) NWs fabricated via thevapour–liquid–solid mechanism. We first describe an optical lithographic methodfor creating Ohmic contacts to NW field effect transistors with both top andbottom electrostatic gates to characterize carrier density and mobility. Multiprobemeasurements show that carrier modulation occurs in the channel and is not acontact effect. We then show that NW fabrication runs with nominally identicalgrowth parameters yield similar electrical results across sample populations of>50 devices. By systematically altering the growth parameters we were able todecrease the average carrier concentration for these as-grown GaN NWs∼10-fold,from 2.29 × 1020 to 2.45 × 1019 cm−3, and successfully elucidate the parameters that exert the strongest influence onwire quality. Furthermore, this study shows that nitrogen vacancies, and notoxygen impurities, are the dominant intrinsic dopant in HW-CVD GaN NWs.
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