Abstract
Electrical characterization of rapid thermal oxides on Si/sub 0.887/Ge/sub 0.113/ and Si/sub 0.8811/Ge/sub 0.113/C/sub 0.0059/ alloys were carried out using the capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. A high interface trap density (/spl sim/10/sup 12/ eV/sup -1/ cm/sup -2/) and a high apparent doping level were obtained from the C-V measurements for the SiO/sub 2//Si/sub 0.8811/Ge/sub 0.113/C/sub 0.0059/ samples. The interface state density for the SiO/sub 2//Si/sub 0.887/Ge/sub 0.113/ system was found to be 3.15/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/. The C-V results at different temperatures showed that the high apparent doping levels of the SiO/sub 2//Si/sub 0.8811/Ge/sub 0.113/C/sub 0.0059/ samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.
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