Abstract
Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen acceptors in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1−xMgxSySe1−y:N, exhibited a significantly lower value of room-temperature mobility of holes, and fast-carrier freeze-out at relatively high temperature, approximately T=200 K.
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