Abstract
Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in the SiGe quantum well in the structure covered by PQ thin film is attributed to electrical passivation of Si surface states. Finally, the density of Si surface states (state/eV cm2), and surface Fermi level position, have been evaluated via Modified Mid-gap Pinning Model (MMPM) applied to experimental results.
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