Abstract
N-channel MOSFET's of different dimensions were first irradiated with /sup 60/Co Gamma rays source at several total doses (low doses) and then their gate oxides, SiO/sub 2/ and interfaces, Si/SiO/sub 2/ were characterized by using the standard charge pumping (CP) and the extended standard CP to low frequencies techniques. Both techniques reveal two radiation-induced oxide charge traps formation mechanisms, caused by low radiation total doses. Initially, there is a build-up of positive charge in the oxide layer, followed later by diminution of net positive charge (turn around effect) due to generation of negative charge or/and transformation of positive oxide traps to interface traps. While the interface traps exhibit a linear increase with radiation doses.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
