Abstract
ABSTRACT This paper describes a study of the deposition of nickel oxide (NiO) thin film and its switching properties. The NiO films were deposited by dc reactive magnetron sputtering in an Ar/O2 mix at room temperature on Pt/Ti/SiO2/Si substrates. The effects of O2 concentration on the deposition rate, crystal structure, microstructure and electrical properties of films were investigated. As the O2 concentration increased, the deposition rate of NiO films gradually decreased. Film crystallinity and microstructure improved with increasing O2 content but became poorer at O2 concentrations over 40%. NiO films deposited at 12% O2 exhibited good switching properties applicable to the memory device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
