Abstract
Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. TheI-Vmeasurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature.
Highlights
Conducting polymers, including polyacetylene, polyaniline (PANI), polypyrrole, polythiophene, poly(pphenylene-vinylene), and so forth, are termed organic polymers that possess the electrical, electronic, magnetic, and optical properties that are close to that of metals
Different parameters for the assembled NPANI/porous silicon (PSi) heterojunction were calculated from I-V measurements performed in the dark conditions in the temperature range 298–373 K
It has been found that while the zero-bias barrier height decreases, the ideality factor increases with decreasing temperature
Summary
Conducting polymers, including polyacetylene, polyaniline (PANI), polypyrrole, polythiophene, poly(pphenylene-vinylene), and so forth, are termed organic polymers that possess the electrical, electronic, magnetic, and optical properties that are close to that of metals. Nano-PANIs have been synthesized using dodecylbenzylsulfonic acid, which was successfully electrodeposited on the surface of glassy carbon electrodes to form nanostructured films suitable for heterogeneous catalysis applications [24] As another class of important materials, porous silicon (PSi) is commonly prepared by chemical or electrochemical. Regarding the use of PSi, Chiboub et al successfully prepared a PANI/PSi hybrid structure by oxidative chemical/electrochemical polymerization of an aniline-terminated PSi surface in the presence of aniline monomer in the solution. As the operating temperature of the devices made of such heterojunctions is a determinant factor of their efficiency, Aydogan et al [34] studied the I-V characteristics of Au/PANI/PSi/Al heterostructure in a wide range of temperatures (90–300 K) They showed a decrease in the barrier height (BH) and an increase in the ideality factor (n) with decreasing temperature. The wafer was washed with deionized water several times
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