Abstract
In this paper, experimental data on the electrical properties of as deposited and annealed nanocrystalline SnSe and ZnSe thin films are reported. The thin films of SnSe and ZnSe are deposited on glass substrate by chemical bath deposition method. The films are studied before and after thermal annealing at temperatures 473 K for 1 h. This annealing is done in vacuum of 2 × 10−3 mbar. The various electrical parameters like dark conductivity, photoconductivity, activation energy, photosensitivity and carrier life time have been measured on these films before and after annealing.
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