Abstract
Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm,obtained by boron implantation of amorphous silicon layers, have been studied byremote-beam-induced current (REBIC) in a scanning tunnelling microscope(STM) and by current imaging tunnelling spectroscopy. STM images reveal a cellstructure with cell sizes of about 200 nm. STM–REBIC images displayspace-charge regions associated with the cell boundaries. The STM–REBICcontrast has been found to depend on the implantation dose and the thermaltreatment given to the sample. The results show the capability of STM–REBIC toimage electrically active regions in nanocrystalline silicon films with a resolutionof up to 10 nm.
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