Abstract
Effect of crystalline defects on minority carrier lifetime in silicon is investigated with regard to oxygen concentration and annealing conditions. Various defects have been introduced during two-step annealing in wafers sliced from several positions in Czoch-ralski silicon ingot. For each wafer, lifetime was measured by the photo-conductive decay method. Defects were analyzed by transmission electron microscopy. Lifetime and defect generation show plain dependence on both crystal position (oxygen concentration) and annealing conditions. Lifetime is found to be inversely proportional to the cube root of stacking fault volume density. Contributions from microdefects other than stacking faults were found.
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