Abstract
The effect of processing technology and oxygen contamination on the electrical characteristics of the interface of unitype directly bonded Si wafers is investigated. A study on p–p and n–n bicrystals bonded after joining in air or deionized water shows that the interface activity is defined by a contamination level of oxygen and acceptor-like impurities (probably aluminum). The activity of oxygen-free interface in the bicrystals manufactured by joining and annealing of ion-etched wafers in vacuum depends mainly on mismatching of the bonded wafer crystal lattices. The properties of bicrystals with a buried oxide layer specially grown before bonding are strongly dependent both on the homogeneity of SiO 2 and contamination of SiO 2/Si interface by aluminum.
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