Abstract
Indium Gallium Zinc Oxide (InGaZnO) has gained increasing attention as a replacement for amorphous silicon in thin-film transistors (TFTs) owing to its excellent electrical and optoelectronic properties, chemical stability, and potential for low-temperature processing.
 However, efforts are being made to optimize the design to improve the performance and reduce costs.
 In this study, a top-contact top-gate (TCTG) structure of InGaZnO TFTs was fabricated using three lithography steps. The electrical current–voltage characteristics of the device were measured and used to extract the device parameters.
 The result shows transistor parameters with threshold voltage of –9 V, ON-OFF ratio of in the range of 103, maximum mobility of 1.15 cm2V-1 s-1, subthreshold slope of in the range of 103 mV/dec, and maximum interface trap density of 1.53x103 (cm-2eV-1) at maximum applied voltage of 5 V.
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