Electrical characterization of growth-induced defects in n-GaN

Abstract

We report the electronic properties, obtained by deep level transient spectroscopy (DLTS), of electron trap defects in n-GaN, grown by hydride vapour phase epitaxy (HVPE), metal-organic vapour phase epitaxy (MOVPE), reactive molecular beam epitaxy (RMBE) and, for the first time, epitaxial lateral overgrowth (ELO) MOVPE. Two prominent traps with energy levels at EC − 0.27 eV and EC − 0.61 eV, respectively, are introduced during all four methods. Their filling kinetics suggest that they are extended defects. On the other hand, the levels at EC − 0.65 eV and EC − 0.21 eV are only detected in HVPE and RMBE grown GaN, respectively, and appear to be characteristic of these methods.