Abstract
In this Letter, we discuss the results of Hall effect measurements to examine the electrical properties of the graphene films synthesized by low-temperature microwave plasma chemical vapor deposition. Van der Pauw devices with sizes of 50–100 μm were fabricated, for which we observed p-type conduction and mobility from 10 to 100 cm2/V s. To investigate the mobility dispersion, we performed Raman mapping to quantify the number of defects and the disorder in graphene films. The results suggest that the D-band/G-band intensity ratio is correlated with the mobility. Moreover, we discuss the factors controlling the mobility and how to improve the quality of the graphene films by reducing the number of defects.
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