Abstract
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I–V) curve. Acquisition of the I–V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.
Highlights
IntroductionFor several decades research on DNA material and DNA-based devices has attracted huge attention
For several decades research on DNA material and DNA-based devices has attracted huge attention.In a great deal of research, electron transfer through molecular wires and DNA strands has been modelled as donor-bridge-acceptor systems due to the analogy between them
Petrove et al have theoretically studied the influence of an external magnetic field upon a molecular wire [4,11] and in 2002, Dawei et al reported the magnetic resistance of G4-DNA in a molecular device [14]
Summary
For several decades research on DNA material and DNA-based devices has attracted huge attention. The important and interesting issue in DNA base device is their semiconductive behavior [9,10] or response in the presence of external electric and magnetic fields [11] Some semiconductors, such as silicon, are fabricated under high temperature conditions. Several works have been conducted concerning current transport in DNA structures in magnetic fields but many of them are theoretical studies and still need more investigation as experimental research In this regard, Petrove et al have theoretically studied the influence of an external magnetic field upon a molecular wire [4,11] and in 2002, Dawei et al reported the magnetic resistance of G4-DNA in a molecular device [14]. The authors intend to exploit such magnetic sensitivity behavior of MDM structures in bioengineering studies and nanoelectronic devices
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