Abstract
Electrical properties of two kinds of sandwich structures (SnO 2 :F/por-TiO 2 /Ti and Si/por-TiO 2 /Pd) are investigated by the methods of I-V, C-V characteristics and DLTS in vapors of water and alcohol. It has been demonstrated that besides the change of the conductivity and of the capacitance of the por-TiO 2 layers one can also use for gas sensing the change of the high frequency capacitance of the MOS type structure, measurement of the current response at relatively low frequencies and the modification of the charge transfer between the Si bulk and states near the por-TiO 2 /Si interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
