Electrical characterization of FBK small-pitch 3D sensors after γ-ray, neutron and proton irradiations

Abstract

In view of applications in the tracking detectors at the High Luminosity LHC (HL-LHC), we have developed a new generation of 3D pixel sensors featuring small-pitch (50 × 50 or 25 × 100 μ m2) and thin active layer (∼ 100 μ m). Owing to the very short inter-electrode distance (∼ 30 μ m), charge trapping effects can be strongly mitigated, making these sensors extremely radiation hard. However, the downscaled sensor structure also lends itself to high electric fields as the bias voltage is increased, motivating investigation of leakage current increase in order to prevent premature electrical breakdown due to impact ionization. In order to assess the characteristics of heavily irradiated samples, using 3D diodes as test devices, we have carried out a dedicated campaign that included several irradiations (γ -rays, neutrons, and protons) at different facilities. In this paper, we report on the electrical characterization of a subset of the irradiated samples, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for full depletion (hence high efficiency) also at the maximum fluence foreseen at the HL-LHC.