Abstract
The electrical characterization of Cl- or N-doped layers in the ZnMgSSe material system is reported. We used biscyclopentadienylmagnesium, dimethylzinc-triethylamine, tertiary-butylthiol, diisopropylselenide and ditertiarybutylselenide to grow layers by metalorganic vapor phase epitaxy at various low growth temperatures (330–440°C). Capacitance-voltage profiling, current-voltage, Hall, and transient photocapacitance measurements in conjunction with photoluminescence spectra were used to verify the layer properties. With intentional chlorine doping using 1-chlorobutane, free electron concentrations of up to 2 × 1018cm−3 in ZnSe and 1 × 1017cm−3 in ZnSxSe1 − x (x = 4%) have been achieved. All C-V measurements on ZnSe:N doped with bistrimethylsilylamidozinc, trimethylsilylazide, or triallylamine show n-type or semi-insulating behavior, although PL spectra show acceptor-bound excitons and DAP recombinations. Compensation due to incorporated hydrogen originating from the precursor is assumed, besides a background chlorine contamination. However, Hall measurements of several samples doped with BTM and TAN indicate p-type conduction. Maximum hole concentrations of 5 × 1017cm−3 and Hall mobilities of 30 cm2/V · s were measured. Transient photocapacitance measurements confirm the presence of traps with very long time response, probably at the AuZnSe interface.
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