Electrical characterization of different types of transistors fabricated in VeSTIC process

Abstract

A development of the VeSTIC technology is reported. The manufacturing of the test structures with different types of transistors is described. The electrical 1-V characteristics of the MOS and junction field effect transistors and of the bipolar junction transistors produced in VeSTIC technology were measured. Basic parameters of the test devices were extracted using the simple device compact models. The technology was assessed taking into consideration the process variability issues.