Abstract
Summary An array of Gold (Au) schottky contacts have been deposited on RF Sputtered nanocrystalline Zinc Oxide thin film. A systematic analysis on the electrical parameters of the Schottky diode with the help of current–voltage (I–V) and capacitance-voltage (C–V) measurements has been done, which confirmed its excellent rectifying characteristics. To incorporate the influence of series resistance in the determination of Schottky diode parameters (barrier height, ideality factor and saturation current), Cheung's method along with thermionic emission model has also used. The discrepancy in the value of barrier height determined from C–V characteristics throws light into the presence of interface states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
