Electrical Characterization of ALD ZnO and HfO2 Thin Films

Abstract

ALD ZnO was deposited at 150oC and HfO2 was deposited at 250oC. The deposition rate for ZnO was calculated to be 2 Aå/cycle and that of HfO2 was found to be 1 Aå/cycle. A 4nm thick film of HfO2 was deposited on 400 nm of ALD ZnO as well as on a reference bulk single crystal ZnO. The Hall measurements revealed an n-type carrier concentration of~1.7 x1019cm-3 and a mobility of 24cm2/V-s for the 400nm as-deposited ALD ZnO. Four-point was used to measure the electrical properties of ALD ZnO.