Abstract
Schottky diode with 6H-SiC/MEH-PPV/Al polymer interface was prepared and characterized by using current-voltage data in the temperature range of 80-400K. Important parameters of the produced diode such as ideality factor, barrier height and saturation current were calculated. In addition, the series resistance of the diode was calculated using Cheung and Norde methods. In addition, the calculated diode characteristics were discussed by comparing with each other and with the literature. Strong dependence of the calculated characteristics on temperature has been determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
