Abstract
Ultrathin oxynitride gate dielectrics of similar thickness (∼1.3 nm) processed by an in situ steam-generated (ISSG), an ISSG with NO rapid thermal processing (RTP) treatment (ISSG-NO), and an ISSG with O 2 RTP treatment (ISSG-O 2 ) are investigated. The results demonstrate that ISSG-NO gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-NO oxynitride film is an attractive candidate as the gate dielectrics in 90 nm and possibly beyond for complementary metal oxide semiconductor technologies.
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