Abstract
Atomic force microscopy (AFM) has been used to fabricate and electrically characterize SiO2films as gate dielectrics of metal–oxide–semiconductor (MOS) electronic devices.The electrical properties of the AFM grown oxide (3 nm thick) have beendetermined at a nanometric scale and compared to those of thermal gate oxides(GOXs). The results show a similar electrical behaviour of both kinds ofoxide. Furthermore, the broken down GOX locations (breakdown spots)induced in microelectronic-sized devices have been located and electricallycharacterized with AFM. The results indicate that AFM is a suitable tool for thefabrication and reliability analysis of present and future Si/SiO2based MOS nanoelectronic devices.
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