Abstract
This work describes a comparison of current density–voltage (J–V) and capacitance–voltage (C–V) properties measured as a function of temperature; deep trap properties are measured by deep level transient spectroscopy (DLTS) of Schottky diodes fabricated on n-type gallium nitride (GaN grown by metal organic vapor phase epitaxy (MOVPE). Unexpected behavior in the standard Richardson plot was observed in the temperature range 165–480K, reflecting a range of Schottky barrier heights and a variation of ideality factor. This was explained by applying a Gaussian spatial distribution of barrier heights across the Schottky diode. C–V measurements were carried out in the temperature range 165–480K to compare the temperature dependence of the barrier height with those obtained by the Gaussian distribution method. DLTS and high-resolution Laplace DLTS (LDLTS) show a majority carrier peak centered at 450K.
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