Abstract

The electrical characteristics of a LPE n-type GaAs crystal have been fully measured. The experimental results were used to build a model, including the parametrization of the electric field inside the crystal, and to study the features of such material as a detector in view of a possible application for digital radiography. The predictions of a Monte Carlo based on this model are in very good agreement with the measured performances of this crystal when used as a detector for X-rays in the diagnostic energy range.

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