Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Abstract

Back-gated WSe2 field effect transistor (FET) with amorphous BN (a-BN) capping layer was fabricated by a direct chemical vapor deposition (CVD) assemble technique, and the electrical performance was investigated. The field effect mobility and the on/off current ratio of the a-BN capped WSe2 FET both improved by one order of magnitude due to the clean and conformal contact between the BN and WSe2 interface that further reduced the extrinsic scattering. This technique could be further applied for other 2D material based devices.