Abstract
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3-18.6 μm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ≥75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> , as expected for long-channel FETs. A respectable <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> / <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio of 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> is obtained.
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