Abstract
The electrical characteristics of hafnium oxide films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of A/cm2 at 1 V and reduced bulk oxide charges were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that films deposited by standard thermal evaporation are suitable for MOS device applications. © 2004 The Electrochemical Society. All rights reserved.
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