Electrical Characteristics of the Fluorinated MOHOS Flash Memory Using Fluorine Ion Implantation

Abstract

Fluorine ion implantation has been used to simultaneously fabricate fluorinated dielectrics of the metal/SiO2/HfO2/SiO2/Si (MOHOS) flash memory. Fluorine incorporation into the OHO stacked dielectrics not only reduces bulk defects and interface states, but also creates deep level traps, both of which are helpful to improve the electrical characteristics. Compared to the flash memory without fluorine incorporation, the fluorinated MOHOS flash memory therefore exhibits faster than 10x improvements on the program/erase speed, smaller than 8% charge loss after 10-year, and less than 14% window closure after 105 endurance cycles.