Abstract
SiC die/Al foil/AlN junctions are successfully fabricated by using surface activated bonding, i.e., without using solders. No structural defects are observed in Al/AlN interfaces. We measure current-voltage characteristics of Schottky diodes, which are fabricated on the SiC die before bonding, by applying bias voltages between Schottky contacts and the surface of Al foil that is connected to ohmic contacts. Schottky diodes normally operate at junction temperatures up to 300 °C. No change is observed in appearance of the SiC die/Al foil/AlN junction even after the measurement at 300 °C. Parasitic resistances get larger after the measurement at 300 °C, which is assumed to be due to the possible oxidation of surfaces of Al foil.
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