Abstract
We report the fabrication, structure characteristics and vertical transport properties of SiO 2/crystalline Si quantum dots/SiO 2 double-barrier diodes in this paper. a-Si:H films of 20 nm thick were deposited using a high hydrogen dilution silane plasma enhanced chemical vapor deposition system; then the films are thermally crystallized and simultaneously oxidized. Cross-section and high resolution transmission electron microscopy photographs indicate the formation of SiO 2 barrier layers and crystalline Si quantum dots structures. The vertical electrical characteristics of these diodes exhibit a series of unique conductance maxima at room temperature. The real voltage spacing between adjacent maxima (∼1 V) is in good agreement with the calculated results based on the model of Coulomb blockade effect.
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