Abstract
Schottky diodes were formed on n-GaAs surfaces which had previously undergone a heat treatment of 450 degrees C for 120 S, which is similar to those typically used for ohmic contact alloying. The Schottky diodes formed on heat treated GaAs wafers were found to exhibit up to a factor of 30 times higher reverse-bias leakage current than diodes fabricated on substrates which were not heat treated. Controlled etching of heat-treated GaAs substrates results in a significant improvement in the performance of Schottky diodes subsequently formed thereon. GaAs substrates that were capped by a spin-on glass layer during heat treatment exhibit much less surface degradation when compared with uncapped GaAs surfaces. It is found that the diode parameters of heat-treated samples can be completely recovered by controlled etching of the top GaAs active layer prior to Schottky gate deposition.
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