Abstract
The voltage-controlled negative resistance (VCNR) and switching characteristics of r.f.-sputtered Al 2O 3 MIM structures were investigated as functions of pressure and temperature. Above a certain critical pressure in the region of 0.1 Torr, VCNR and transient effects fail to occur and the junctions remain in a low conductivity state. We also observe that for junctions held in ambient temperatures of below 200 K no VCNR or switching effects occur and the junction remains in a low conductivity state. We conclude that neither filamentary nor tunneling models provide completely satisfactory descriptions of the transport mechanisms involved for the structures examined.
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