Abstract
The effects of inductively coupled plasma (ICP) etching on electrical properties of Pt/Au–Al 0.45Ga 0.55N Schottky contacts are investigated. There are two linear parts in the ln I– V curves of ICP-etched Schottky contacts at small forward currents at 198–298 K. Thermionic field emission (TFE) theory analysis shows that Schottky contact with ICP etching has much lower barrier height and higher tunnel transmission probability than that without ICP etching, which could be attributed to plasma damage introduced on the ICP-etched surface. The down linear part is probably connected to surface tunneling component originated from plasma-etched surface which joins Schottky area to Ohmic area.
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