Electrical Characteristics of Multilayer MoS2 Transistors at Real Operating Temperatures and Different Ambient Conditions

Abstract

We describes the electrical characteristics of multilayer MoS2 thin film transistors (TFTs) through variable temperature measurement (from room temperature up to 350 K) and different operating ambients (in air and in a vacuum, ~10-5 Torr). Carrier transport mechanism was predicted through the observed temperature dependent electrical parameters (threshold voltage, field effect mobility, sub-threshold slope). Preliminary evidences were explained that the dominant transport mechanism of multilayer MoS2 TFTs could be the combination of the optical phonon scattering and thermionic emission depending on the working temperature. Furthermore, through additional low-frequency noise measurement, we supported the expectation that the multilayer MoS2 has better immunity than single-layer for the effect of chemisorption because multilayer MoS2 has relativley thick compared to Debye length where real carrier transportation occurs in the underlying channel.