Abstract
Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm2/Vs to 10.26 cm2/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs.
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