Abstract
The current-voltage ( J- V) characteristics of metal contacts on the surface of hydrogenated amorphous silicon-carbon alloy (a-Si x C 1- x :H) films were studied through a comparison with the optical properties of the films. The a-Si x C 1- x :H films were deposited by a tetrode RF sputtering technique applying the plasma decomposition of C 3H 3 (100%) and H 2/Ar(H 2 20%) mixed gas. The partial pressure ratio of C 3H 8 to H 2/Ar, R p, in the film deposition chamber was chosen as a variable factor for the film deposition. The J- V characteristics of metal/a-Si x C 1- x :H contacts were measured using a metal/a-Si x C 1- x :H/n-c- Si/Al diode. Al was used as contact metal on a-Si x C 1- x :H surfaces. The measurement results of the J- V characteristics of the diodes showed that the characteristics are concerned with the optical energy gap E GO and the Fermi level E F which depend on R p.
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